GaN Reactor Cleaning

Yarmouth is now offering a new, proprietary  process for cleaning GaN epi reactors. This process was developed in Japan by Furukawa Denshi and offers efficient removal of GaN ,InGaN, AlGaN and AlN via a dry chlorine etch. Our process is fast (5-6 hours typical etch time) and makes very efficient use of chlorine (<10% Cl waste). Please contact us for details.