Yarmouth Materials is now offering super durable aluminum nitride ceramic parts for GaN MOCVD and plasma etching. Our AlN is extremely resistant to plasma etching. Our parts will last orders of magnitude longer than SiC coated graphite.
Ready to go from R&D to high yield, low cost volume production? Contact Yarmouth:
Yarmouth is now offering a new, proprietary process for cleaning GaN epi reactors. This process was developed in Japan by Furukawa Denshi and offers efficient removal of GaN ,InGaN, AlGaN and AlN via a dry chlorine etch. Our process is fast (5-6 hours typical etch time) and makes very efficient use of chlorine (<10% Cl waste). Please contact us for details.
Supplier of the world’s finest yttrium oxides, aluminum oxides and rare earths.
Recent yttrium oxide lots: